2SC5704-A - NPN SILICON RF TRANSISTOR

CEL

Download the 2SC5704-A datasheet PDF. This datasheet also covers the 2SC5704 variant, as both devices belong to the same npn silicon rf transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz.
High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz.
6-pin lead-less minimold package.

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2SC5704-A npn silicon rf transistor by CEL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SC5704-CEL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SC5704-A
Manufacturer	CEL
File Size	700.05 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	2SC5704-A Datasheet

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Other Datasheets by CEL

Part Number	Description
2SC5704-T3-A	NPN SILICON RF TRANSISTOR
2SC5704	NPN SILICON RF TRANSISTOR
2SC5753	NPN SILICON RF TRANSISTOR
2SC5754	NPN SILICON RF TRANSISTOR
2SC5006	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz • 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.