2SC5704 - NPN SILICON RF TRANSISTOR

CEL

Key Features

Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz.
High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz.
6-pin lead-less minimold package.

2SC5704 npn silicon rf transistor by CEL - Datasheet Preview

Datasheet Details

Part number	2SC5704
Manufacturer	CEL
File Size	700.05 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	2SC5704 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC570	SILICON NPN TRANSISTOR	Toshiba
2SC5700	NPN TRANSISTOR	Hitachi Semiconductor
2SC5700	Silicon NPN Transistor	Renesas
2SC5702	Silicon NPN Epitaxial Type Transistor	Renesas
2SC5702	Silicon NPN Transistor	Hitachi

Other Datasheets by CEL

Part Number	Description
2SC5704-A	NPN SILICON RF TRANSISTOR
2SC5704-T3-A	NPN SILICON RF TRANSISTOR
2SC5753	NPN SILICON RF TRANSISTOR
2SC5754	NPN SILICON RF TRANSISTOR
2SC5006	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz • 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.