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Product Folder Order Now Technical Documents Tools & Software Support & Community BQ24725A SLUSAL0C – SEPTEMBER 2011 – REVISED JANUARY 2020 BQ247

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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Machine Translated by Google IP2312 Single-cell lithium battery synchronous switch buck charging IC 1 Features ÿ Synchronous switch step-down chargi

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Spec. No. SAMSUNG SDI Confidential Proprietary INR18650-35E Version No. Ver. 1.1 SPECIFICATION OF PRODUCT for Lithium-ion rechargeable cell Model na

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www.DataSheet4U.com Model 3022 • Vibration/Shock Monitoring PC Board Mountable Accelerometer Millivolt Output Low Cost • Modal Analysis • Motion Cont

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Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L

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XB4908 SERIES One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION The XB4908 SERIES product is a high i ntegration solution for li

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SGM41511 I2C Controlled 3A Single-Cell Battery Charger with High Input Voltage Capability and Narrow Voltage DC (NVDC) Power Path Management FEATURES

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

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Cell Type UR18650A Specifications Nominal Capacity Nominal Voltage Charging Method Charging Voltage Charging Current Charging Time Ambient Temperature

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GB CELL TECHNOLOGY FILE FILE NAME：Specification for 18650C4 Cylindrical Lithium Ion Rechargeable Battery File Number P3-PRO3/CT3-002/A/C Prepared i

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www.cellwise-semi.com Features ÿOvercharge detection function • Threshold range 3.750V, 4.175V~4.450V, 25mV step, ± 25mV accuracyÿOverdischarge detect

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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