NE02135 transistor equivalent, npn silicon high frequency transistor.
* HIGH INSERTION GAIN: 18.5 dB at 500 MHz
* LOW NOISE FIGURE: 1.5 dB at 500 MHz
* HIGH POWER GAIN: 12 dB at 2 GHz
* LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2.
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ. (MHz) NFOPT (dB.
NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or .
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