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NE02139 - NPN SILICON HIGH FREQUENCY TRANSISTOR

This page provides the datasheet information for the NE02139, a member of the NE021 NPN SILICON HIGH FREQUENCY TRANSISTOR family.

Datasheet Summary

Description

NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems.

Low noise and high current capability provide low intermodulation distortion.

The NE021 series is available as a chip or in several package styles.

Features

  • HIGH.

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Datasheet preview – NE02139

Datasheet Details

Part number NE02139
Manufacturer CEL
File Size 204.13 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE02139 Datasheet
Additional preview pages of the NE02139 datasheet.

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Full PDF Text Transcription

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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability.
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