NE321000 - ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

CEL

The NE321000 by CEL is a ULTRA LOW NOISE PSEUDOMORPHIC HJ FET. Below is the official datasheet preview.

Datasheet Details

Part number	NE321000
Manufacturer	CEL
File Size	161.99 KB
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Datasheet	NE321000_CEL.pdf
Additional preview pages of the NE321000 datasheet.

NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.

SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE &.

📁 NE321000 Similar Datasheet

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Other Datasheets by CEL

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Published: Mar 31, 2007 |