Datasheet4U Logo Datasheet4U.com

NE321000 Datasheet - CEL

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

NE321000 General Description

NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NEC's stringent quality ass.

NE321000 Datasheet (161.99 KB)

Preview of NE321000 PDF

Datasheet Details

Part number:

NE321000

Manufacturer:

CEL

File Size:

161.99 KB

Description:

Ultra low noise pseudomorphic hj fet.

📁 Related Datasheet

NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)

NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET (NEC)

NE3210S01 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE32400 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)

NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-SL C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-T1A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32500 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)

NE32584 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

TAGS

NE321000 ULTRA LOW NOISE PSEUDOMORPHIC FET CEL

Image Gallery

NE321000 Datasheet Preview Page 2 NE321000 Datasheet Preview Page 3

NE321000 Distributor