Datasheet Details
| Part number | NE321000 |
|---|---|
| Manufacturer | CEL |
| File Size | 161.99 KB |
| Description | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| Download | NE321000 Download (PDF) |
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| Part number | NE321000 |
|---|---|
| Manufacturer | CEL |
| File Size | 161.99 KB |
| Description | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| Download | NE321000 Download (PDF) |
|
|
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NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.
Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications.
NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
www.DataSheet4U.com ULTRA LOW NOISE PSEUDOMORPHIC HJ FET.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
NE321000 | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP | NEC |
| Part Number | Description |
|---|---|
| NE3210S01 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE350184C | HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3509M04 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3510M04 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3511S02 | X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3512S02 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3514S02 | K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |