| Part Number | NE321000 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial sys.
* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz * Gate Length: Lg ≤ 0.20 µm * Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE321000 Standard (Grade D) Quality Grade Remark To order evaluation samples, please contact your local NE. |
NE321000 Datasheet and Specifications PDF
The NE321000 is a C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP.
| Part Number | NE321000 Datasheet |
|---|---|
| Description | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| Manufacturer | CEL |
| Overview |
NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated .
* SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11 * GATE LENGTH: ≤0.2 µm * GATE WIDTH: 160 µm DESCRIPTION NEC's NE321000 is a Hetero-Junction FET. |