NE321000 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

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NEC

Part number	NE321000
Manufacturer	NEC
File Size	48.78 KB
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Datasheet	NE321000 Datasheet
Additional preview pages of the NE321000 datasheet.

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.

Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz.
Gate Length: Lg ≤ 0.20 µm.
Gate Width : Wg = 160 µm.

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Published: May 12, 2005 |