NEC NE321000
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.| Part No. | NE321000 |
|---|---|
| Datasheet | NE321000 Download |
| Manufacturer |  NEC |
| Description | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz● Gate Length: Lg ≤ 0.20 µm
● Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE321000 Standard (Grade D) Quality Grade Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE321000)
ABSOLUTE MAXIMUM RATINGS
(TA = +25°C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Note Ratings 4.0 –3.0 IDSS 100 200 175 –65 to +175 Unit V V mA µA mW °C °C Tch Tstg Note Chip mounted on an Alumina heatsink (size: 3 × 3 × 0.6 t) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
