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NE321000 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

General Description

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz.
  • Gate Length: Lg ≤ 0.20 µm.
  • Gate Width : Wg = 160 µm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE321000 Standard (Grade D) Quality Grade Remark To order evaluation samples, please contact your local NEC sales office.