NE5511279A Datasheet - CEL

7.5V OPERATION SILICON RF POWER LD-MOS FET

NE5511279A Features

* High output power

* High power added efficiency

* High linear gain

* Surface mount package

* Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset

NE5511279A General Description

The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% pow.

NE5511279A Datasheet (797.72 KB)

NE5511279A Datasheet Preview — Preview of NE5511279A PDF

Datasheet Details

Part number:

NE5511279A

Manufacturer:

CEL

File Size:

797.72 KB

Description:

7.5v operation silicon rf power ld-mos fet.

📁 Related Datasheet

NE5511279A 7.5 V UHF BAND RF POWER SILICON LD-MOS FET (NEC)

NE5510179A 3.5V OPERATION SILICON RF POWER MOSFET (NEC)

NE5510279A 3.5V OPERATION SILICON RF POWER MOSFET (NEC)

NE5512 Dual high-performance operational amplifier (Philips)

NE5512D Dual high-performance operational amplifier (Philips)

NE5512N Dual high-performance operational amplifier (Philips)

NE5514 Quad high-performance operational amplifier (Philips)

NE5514D Quad high-performance operational amplifier (Philips)

NE5514N Quad high-performance operational amplifier (Philips)

NE5517 Dual operational transconductance amplifier (Philips)

TAGS

NE5511279A 7.5V OPERATION SILICON POWER LD-MOS FET CEL

Image Gallery

NE5511279A Features

NE5511279A General Description

Datasheet Details

File Size:

Description:

NE5511279A Distributor