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NE5511279A Datasheet Preview

NE5511279A Datasheet

7.5V OPERATION SILICON RF POWER LD-MOS FET

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SILICON POWER MOS FET
NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology
and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added
efficiency at 900 MHz under the 7.5 V supply voltage.
FEATURES
High output power
High power added efficiency
High linear gain
Surface mount package
Single supply
: Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA)
: Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA)
: add = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA)
: add = 50% TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA)
: GL = 15.0 dB TYP. (f = 900 MHz, VDS = 7.5 , Pin = 5 dBm V, IDset = 400 mA)
: GL = 18.5 dB TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 5 dBm, IDset = 400 mA)
: 5.7 5.7 1.1 mm MAX.
: VDS = 2.8 to 8.0 V
APPLICATIONS
460 MHz Radio Systems
900 MHz Radio Systems
ORDERING INFORMATION
Part Number
NE5511279A-T1
NE5511279A-T1A
Package
79A
Marking
W3
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5511279A-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10322EJ01V0DS (1st edition)
Date Published June 2003 CP(K)




CEL

NE5511279A Datasheet Preview

NE5511279A Datasheet

7.5V OPERATION SILICON RF POWER LD-MOS FET

No Preview Available !

NE5511279A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Ratings
Unit
VDS Note
20
V
VGS
6.0
V
ID
3.0
A
Ptot
20
W
Tch
125
C
Tstg
55 to +125
C
Note VDS will be used under 12 V on RF operation.
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
Test Conditions
VDS
VGS
ID
Duty Cycle 50%, Ton 1 s
Pin f = 900 MHz, VDS = 7.5 V
MIN.
0
TYP.
7.5
2.0
2.5
27
MAX.
8.0
3.0
3.0
30
Unit
V
V
A
dBm
2
Data Sheet PU10322EJ01V0DS



Part Number NE5511279A
Description 7.5V OPERATION SILICON RF POWER LD-MOS FET
Maker CEL
Total Page 3 Pages
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NE5511279A Datasheet PDF





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