Datasheet Summary
DATA SHEET
SILICON POWER MOS FET
7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz under the 7.5 V supply voltage.
Features
- High output power
- High power added efficiency
- High linear gain
- Surface mount package
- Single supply
: Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset =...
