• Part: NE5511279A
  • Description: 7.5V OPERATION SILICON RF POWER LD-MOS FET
  • Manufacturer: NEC
  • Size: 44.51 KB
NE5511279A Datasheet (PDF) Download
NEC
NE5511279A

Key Features

  • High output power
  • High power added efficiency
  • High linear gain
  • Surface mount package
  • Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : ηadd = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : ηadd = 50% TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : GL = 15.0 dB TYP. (f = 900 MHz, VDS = 7.5 , Pin = 5 dBm V, IDset = 400 mA) : GL = 18.5 dB TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 5 dBm, IDset = 400 mA) : 5.7 × 5.7 × 1.1 mm MAX. : VDS = 2.8 to 8.0 V
NE5511279A reference image

Representative NE5511279A image (package may vary by manufacturer)