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NE662M16-T3-A, NE662M16 NPN SILICON RF TRANSISTOR

NE662M16-T3-A Description

DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD .

NE662M16-T3-A Features

* Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
* 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: NE662M16-T3-A, NE662M16. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NE662M16-T3-A, NE662M16
Manufacturer
CEL
File Size
700.05 KB
Datasheet
NE662M16-CEL.pdf
Description
NPN SILICON RF TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: NE662M16-T3-A, NE662M16.
Please refer to the document for exact specifications by model.

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📌 All Tags

NPN SILICON TRANSISTOR CEL
CEL NE662M16-T3-A-like datasheet