• Part: NE664M04-T2-A
  • Description: NPN SILICON RF TRANSISTOR
  • Category: Transistor
  • Manufacturer: CEL
  • Size: 2.07 MB
Download NE664M04-T2-A Datasheet PDF
CEL
NE664M04-T2-A
FEATURES - Ideal for 460 MHz to 2.4 GHz medium output power amplification - PO (1 d B) = 26.0 d Bm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 d Bm - High collector efficiency: ηC = 60% - UHS0-HV technology (f T = 25 GHz) adopted - High reliability through use of gold electrodes - Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form - 8 mm wide embossed taping - Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10008EJ02V0DS (2nd edition) Date Published March...