Download the NE664M04-T2-A datasheet PDF.
This datasheet also covers the NE664M04 variant, as both devices belong to the same npn silicon rf transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
Ideal for 460 MHz to 2.4 GHz medium output power amplification.
PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm.
High collector efficiency: ηC = 60%.
UHS0-HV technology (fT = 25 GHz) adopted.
High reliability through use of gold electrodes.
Flat-lead 4-pin thin-type super minimold (M04) package.
Note: The manufacturer provides a single datasheet file (NE664M04_CaliforniaEasternLabs.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for NE664M04-T2-A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NE664M04-T2-A. For precise diagrams, and layout, please refer to the original PDF.
PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN T...
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SISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.
NE664M04-T2-A Datasheet
