| Part number | NE68133 |
|---|---|
| Datasheet | NE68133-CEL.pdf |
| File Size | 1.70 MB |
| Manufacturer | CEL |
| Description | SILICON TRANSISTOR |
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The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
| Part Number | Description |
|---|---|
| NE68130 | NPN SILICON RF TRANSISTOR |
| NE68139 | SILICON TRANSISTOR |
| NE68119 | NPN SILICON EPITAXIAL TRANSISTOR |
| NE681M03 | NPN SILICON TRANSISTOR |
| NE681M13 | NPN SILICON TRANSISTOR |
| NE680 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68000 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68018 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68019 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68030 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
