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NE68133 Datasheet Preview

NE68133 Datasheet

SILICON TRANSISTOR

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DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68133
/
2SC3583
JEITA
Part No.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal amplifiers from VHF band to
UHF band. Low-noise figure, high gain, and high current capability
achieve a very wide dynamic range and excellent linearity. This is
achieved by direct nitride passivated base surface process (DNP
process) which is a proprietary new fabrication technique.
FEATURES
• NF
• Ga
1.2 dB TYP.
13 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
0.15
2
13
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 65
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg 65 to +150
V
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0 A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0 A VEB = 1 V, IE = 0
DC Current Gain
hFE *
50 100 250
VCE = 8 V, IC = 20 mA
Gain Bandwidth Product
fT
9 GHz VCE = 8 V, IC = 20 mA
Feed-Back Capacitance
Cre **
0.35 0.9
pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
11
13
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
15
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.2 2.5 dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350 s, Duty Cycle  2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
Marking
hFE
R33/Q *
R33
50 to 100
R34/R *
R34
80 to 160
R35/S *
R35
125 to 250
* Old Specification / New Specification
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N




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NE68133 Datasheet Preview

NE68133 Datasheet

SILICON TRANSISTOR

No Preview Available !

TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free air
200
100
0
200
100
50
50 100
TA-Ambient Temperature-°C
150
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 8 V
20
10
0.5
30
20
1 5 10
IC-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
VCE = 8 V
50
10
7
5
3
2
1
1
23
5 7 10
20 30
IC-Collector Current-mA
2
NE68133 / 2SC3583
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
f = 1.0 MHz
2
1
0.7
0.5
0.3
0.2
0.1
1
15
23
5 7 10
20 30
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
10
5
VCE = 8 V
f = 1.0 GHz
0
0.5 1
5 10
IC-Collector Current-mA
50 70
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
20
VCE = 8 V
IC = 20 mA
16
MAG
|S21e|2
12
8
4
0
0.1 0.2 0.3 0.5 0.7. 1.0
f-Frequency-GHz
2.0 3.0


Part Number NE68133
Description SILICON TRANSISTOR
Maker CEL
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NE68133 Datasheet PDF






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