NE68119 - NPN SILICON EPITAXIAL TRANSISTOR

Product Overview

CEL

NE68119 NPN SILICON EPITAXIAL TRANSISTOR by CEL - Datasheet Preview — Datasheet preview – NE68119

Datasheet Details

Part number	NE68119
Manufacturer	CEL
File Size	1.81 MB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	NE68119 Datasheet
Additional preview pages of the NE68119 datasheet.

Product details

Description

The NE68119 / 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band.Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique.+0.1 0 0.3 +0.1 0.05

Features

Low Voltage Use.
High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz).
Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Ultra Super Mini Mold Package.

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Published: Jun 8, 2018 |