NE68139 Datasheet - CEL

SILICON TRANSISTOR

NE68139 Features

* NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA

* S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector

NE68139 General Description

The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passiv.

NE68139 Datasheet (1.87 MB)

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Datasheet Details

Part number:

NE68139

Manufacturer:

CEL

File Size:

1.87 MB

Description:

Silicon transistor.
DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68139 / 2SC4094 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MIN.

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NE68139 SILICON TRANSISTOR CEL

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NE68139 Features

NE68139 General Description

Datasheet Details

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