NE68139
DESCRIPTION
The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
PACKAGE DIMENSIONS (Units: mm)
+0.1
- 0.05
+0.1
- 0.05
+0.2
- 0.3
+0.2
- 0.1
(1.9)
+0.1O
- 0.05
FEATURES
- NF = 1.2 d B TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 m A
- S21e2 = 15 d B TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 m A
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
Collector to Emitter Voltage VCEO
Emitter to Base Voltage
VEBO
Collector Current
65 m A
Total Power Dissipation
200 m W
Junction...
