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NE68139 Datasheet Preview

NE68139 Datasheet

SILICON TRANSISTOR

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DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68139
/
2SC4094 JEITA
Part No.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal amplifiers from VHF band
to UHF band. Low-noise figure, high gain, and high current capability
achieve a very wide dynamic range and excellent linearity. This
achieved by direct nitride passivated base surface process (DNP
process) which is a proprietary new fabrication technique.
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
0.3
1.5
+0.2
0.1
FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
50
Gain Bandwidth Product
fT
9
Feed-Back Capacitance
Insertion Power Gain
Cre
0.25
S21e2
13
15
Maximum Available Gain
MAG
17
Noise Figure
NF
1.2
MAX.
1.0
1.0
250
0.8
2.0
hFE Classification
Class
R36/RCF *
R37/RCG *
Marking
R36
R37
hFE
50 to 100
80 to 160
* Old Specification / New Specification
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
R38/RCH *
R38
125 to 250
5°
5°
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
UNIT
A
A
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 8V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IC = 7 mA, f = 1.0 GHz




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NE68139 Datasheet Preview

NE68139 Datasheet

SILICON TRANSISTOR

No Preview Available !

TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free air
200
100
0
50
100
150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 8 V
100
50
20
100.5
1
5
10
50
IC-Collector Current-mA
GAIN BANDWIDTH PRODUT vs.
30
COLLECTOR CURRENT
VCE = 8 V
20
10
7
5
3
2
1
23
5 7 10
20 30
IC-Collector Current-mA
2
NE68139 / 2SC4094
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2.0
f = 1.0 GHz
1.0
0.7
0.5
0.3
0.2
0.1 1
20
2
3
5 7 10
20
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 8 V
f = 1.0 GHz
10
0
1
2
5
10 20
40
IC-Collector Current-mA
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
30
MAG
VCE = 8 V
IC = 20 mA
20
|S21e|2
10
00.1
0.2
0.5
1.0
2.0
f-Frequency-GHz



Part Number NE68139
Description SILICON TRANSISTOR
Maker CEL
Total Page 3 Pages
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NE68139 Datasheet PDF





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