NESG2021M05 transistor equivalent, npn sige high frequency transistor.
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* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: M.
including low noise amplifiers, medium power amplifiers, and oscillators. NECʼs low profile, flat lead style M05 Package pro.
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