NESG2021M05 Datasheet - CEL

NPN SiGe HIGH FREQUENCY TRANSISTOR

NESG2021M05 Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better

NESG2021M05 General Description

NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators. NECʼs low proﬁle, ﬂat lead style M05 Package provides high frequency performance for .

NESG2021M05 Datasheet (755.40 KB)

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Datasheet Details

Part number:

NESG2021M05

Manufacturer:

CEL

File Size:

755.40 KB

Description:

Npn sige high frequency transistor.

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NESG2021M05 NPN SiGe HIGH FREQUENCY TRANSISTOR CEL

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NESG2021M05 Features

NESG2021M05 General Description

Datasheet Details

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Description:

NESG2021M05 Distributor