NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
| Part number | NESG2021M05 |
|---|---|
| Manufacturer | CEL |
| File Size | 755.40 KB |
| Description | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Datasheet |
 NESG2021M05 Datasheet
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Note: Below is a high-fidelity text extraction (approx. 800 characters) for NESG2021M05. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW ...
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
NESG2021M05 | NPN SiGe RF Transistor | Renesas |
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|---|---|
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