NESG2021M05 - NPN SiGe RF Transistor

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Renesas

Part number	NESG2021M05
Manufacturer	Renesas
File Size	234.96 KB
Description	NPN SiGe RF Transistor
Datasheet	NESG2021M05 Datasheet
Additional preview pages of the NESG2021M05 datasheet.

This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP. , Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP. , Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz.
Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz.
High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V.
Flat-lead 4-pin thin-type super minimold (M05) pac.

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Published: Feb 9, 2025 |