NESG2021M05 Description
NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Data Sheet R09DS0034EJ0300 Rev.
NESG2021M05 Key Features
- Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
- High breakdown voltage technology for SiGe Tr. adopted: VCEO (