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NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR

General Description

NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.

Key Features

  • HIGH.

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Datasheet Details

Part number NESG2021M05
Manufacturer CEL
File Size 755.40 KB
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NESG2021M05 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance Pb Free M05 • • • DESCRIPTION NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.