NESG2021M05 Overview
NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NECʼs low profile, flat lead style M05 Package provides high frequency performance for pact wireless designs. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method)...
NESG2021M05 Key Features
- HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (
