Datasheet Details
| Part number | NESG2021M05 |
|---|---|
| Manufacturer | CEL |
| File Size | 755.40 KB |
| Description | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Datasheet | NESG2021M05_CEL.pdf |
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Overview: .. DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR.
| Part number | NESG2021M05 |
|---|---|
| Manufacturer | CEL |
| File Size | 755.40 KB |
| Description | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Datasheet | NESG2021M05_CEL.pdf |
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NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high frequency performance for pact wireless designs.
NESG2021M05 M05 UNITS dB dB dB dB dB dB dBm dBm GHz pF nA nA 130 190 20 15.0 20.0 17.0 MIN TYP 1.3 10.0 0.9 18.0 22.5 19.0 9.0 17.0 25 0.1 0.2 100 100 260 1.2 MAX ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E|2 P1dB OIP3 fT Cre ICBO IEBO hFE Notes: 1.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
NESG2021M05 | NPN SiGe RF Transistor | Renesas |
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