The NESG2021M05 is a NPN SiGe RF Transistor.
| Mount Type | Surface Mount |
|---|---|
| Height | 590 µm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | NESG2021M05 Datasheet |
|---|---|
| Manufacturer | Renesas |
| Overview |
NESG2021M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
Data Sheet
R09DS0034EJ0300 Rev. 3.00
Jun 20, 2012
FEATURES
• This device is a.
* This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz * Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC =. |
| Part Number | NESG2021M05 Datasheet |
|---|---|
| Description | NPN SiGe HIGH FREQUENCY TRANSISTOR |
| Manufacturer | CEL |
| Overview |
NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, an.
* * HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance . |
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