NESG2030M04 Datasheet - CEL

SiGe HIGH FREQUENCY TRANSISTOR

NESG2030M04 Features

* SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M04 DESCRIPTIO

NESG2030M04 General Description

NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 μA to 25 mA. T.

NESG2030M04 Datasheet (455.63 KB)

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Datasheet Details

Part number:

NESG2030M04

Manufacturer:

CEL

File Size:

455.63 KB

Description:

Sige high frequency transistor.

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NESG2030M04 SiGe HIGH FREQUENCY TRANSISTOR CEL

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NESG2030M04 Features

NESG2030M04 General Description

Datasheet Details

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NESG2030M04 Distributor