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NX5302 Datasheet LASER DIODE

Manufacturer: CEL

Datasheet Details

Part number NX5302
Manufacturer CEL
File Size 130.44 KB
Description LASER DIODE
Download NX5302 Download (PDF)

General Description

NEC's NX5302 series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.

This device is ideal for SONET systems, short haul and long haul OC-3, and short haul OC-12 applications.

NX7312UA ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PART NUMBER SYMBOLS VOP ITH PTH PARAMETERS AND CONDITIONS Operating Voltage, PO = 5.0 mW Threshold Current TC = +85°C Threshold Output Power, TC = -40 to +85°C, IF = ITH Differential Efficiency Temperature Dependence ∆ηd = 10 log of Differential Efficiency Center Emission Wavelength, PO = 5.0 mW, RMS (-20 dB), TC = -40 to +85°C UNITS V mA mA µW W/A dB MIN – – – – 0.40 -3.0 NX5302 Series TYP 1.1 10 25 100 0.50 -1.5 MAX 1.3 20 35 200 – ηd ∆ηd λc ∆λc/∆T σ θ⊥ θ|| tr tf Im ID Ct kink γ ηd (@ 85°C) ηd (@ 25°C) nm nm/°C nm ° ° ns ns µA nA nA pF % dB 1263 – – – – – – 200 – – – -20 -1.0 – 0.4 1.0 25 20 0.05 0.15 500 0.1 – 6 – – 1360 0.5 2.5 40 35 0.15 0.30 800 10 500 20 20 1.0 Temperature Dependence of Center Wavelength, Tc = -40 to +85°C Spectral Width, PO = 5.0 mW, RMS (-20 dB), TC = -40 to +85°C Vertical Beam Angle1, PO = 5.0 mW, FAHM2 Lateral Beam Angle1, PO = 5.0 mW, FAHM2 Rise Time, 10 to 90% Fall Time, 10 to 90% Monitor Current, PO = 5.0 mW, VR = 5 V Monitor Dark Current, VR = 5 V VR = 5 V, TC = -40 to +85°C Monitor PD Terminal Capacitance, VR = 5 V, f = 1 MHz Kink (Refer to Definitions) Po = Up to 6.0 mW, TC = -40 to +85°C Tracking Error (Refer to Definitions) Im = const.

Overview

NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5302 Series FOR FIBER OPTIC.