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PRELIMINARY DATA SHEET
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5313 SERIES FOR FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE: TC = -40 to +85°C • InGaAs MONITOR PIN-PD • CAN PACKAGE: ø5.6 mm • FOCAL POINT: 6.35 mm • LD BEAM ANGLE OPTIMIZED FOR 8 DEGREE ANGLED SMF
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 Km) system
DESCRIPTION
NEC's NX5313 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
California Eastern Laboratories
NX5313 SERIES PACKAGE DIMENSIONS (Units in mm)
φ 5.6+0.00 -0.03 φ 4.2±0.1 φ 3.55±0.