NX5313EH - LASER DIODE

Product Overview

Renesas

Datasheet Details

Part number	NX5313EH
Manufacturer	Renesas
File Size	132.79 KB
Description	LASER DIODE
Datasheet	NX5313EH Datasheet
Note	This datasheet PDF includes multiple part numbers: NX5313EH, NX5313. Please refer to the document for exact specifications by model.
Additional preview pages of the NX5313EH datasheet.

Product details

Description

The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. FTTH PON (B-PON, G-PON, GE-PON 10 km) system

Features

Optical output power Po = 13.0 mW.
Low threshold current lth = 6 mA.
Differential Efficiency ηd = 0.5 W/A.
Wide operating temperature range TC =.
40 to +85°C.
InGaAs monitor PIN-PD.
CAN package φ 5.6 mm.
Focal point 6.35 mm.
LD beam angle optimized for 8 degree angled SMF The information in this document is subject to change without notice. Before using this document, please confirm that this is the la.

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Published: Apr 28, 2016 |