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NX5313EH Datasheet

Manufacturer: Renesas

This datasheet includes multiple variants, all published together in a single manufacturer document.

NX5313EH datasheet preview

Datasheet Details

Part number NX5313EH
Datasheet NX5313EH NX5313 Datasheet (PDF)
File Size 132.79 KB
Manufacturer Renesas
Description LASER DIODE
NX5313EH page 2 NX5313EH page 3

NX5313EH Overview

The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATION FTTH PON (B-PON, G-PON, GE-PON 10 km) system.

NX5313EH Key Features

  • Optical output power
  • Low threshold current
  • Differential Efficiency
  • Wide operating temperature range TC = -40 to +85°C
  • InGaAs monitor PIN-PD
  • CAN package
  • Focal point
  • LD beam angle optimized for 8 degree angled SMF
  • 1 Focal Point: A point to get maximum optical output power from fiber

NX5313 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
CEL Logo NX5313 LASER DIODE CEL
Renesas logo - Manufacturer

More Datasheets from Renesas

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Part Number Description
NX5313EK LASER DIODE
NX5313 LASER DIODE

NX5313EH Distributor

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