Datasheet4U Logo Datasheet4U.com

2N3904 - NPN SILICON TRANSISTOR

Download the 2N3904 datasheet PDF (2N3903 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn silicon transistor.

Description

The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 devices are silicon NPN transistors designed for general purpose amplifier and switching applications.

PNP complementary types are 2N3905 and 2N3906.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3903-CENTRALSEMICONDUCTOR.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • 2N3904 - NPN switching transistor (NXP)
  • 2N3904 - NPN Amplifier (Fairchild Semiconductor)
  • 2N3904 - Silicon NPN Transistor (Toshiba)
  • 2N3904 - Silicon NPN Transistor (NTE)
  • 2N3904 - NPN Transistor (Multicomp)
  • 2N3904 - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • 2N3904 - NPN SILICON TRANSISTOR (UTC)
  • 2N3904 - NPN Transistor (Motorola)
  • 2N3904 - SMALL SIGNAL NPN TRANSISTOR (STMicroelectronics)
  • 2N3904 - NPN Transistor (TAITRON)
Other Datasheets by CENTRAL SEMICONDUCTOR
  • 2N3903 - NPN SILICON TRANSISTOR
  • 2N3905 - SILICON PNP TRANSISTORS
  • 2N3906 - SILICON PNP TRANSISTORS
  • 2N3947 - SILICON NPN TRANSISTORS
  • 2N3963 - SILICON PNP TRANSISTORS
  • 2N3964 - SILICON PNP TRANSISTORS
  • 2N3970 - N-CHANNEL JFET
  • 2N3971 - N-CHANNEL JFET

Full PDF Text Transcription

Click to expand full text
2N3903 2N3904 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 devices are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 6.0 200 625 -65 to +150 200 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICEV VCE=30V, VEB=3.0V BVCBO IC=10μA BVCEO IC=1.0mA BVEBO IE=10μA VCE(SAT) IC=10mA, IB=1.
Published: |