Datasheet Summary
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
.
Features
. Low Leakage Current
: ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA . Low Collector Output Capacitance
: C b=4pF(Max.) @ V C B=5V . plementary to 2N3906
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VCBO VCEO VEBO
RATING 60 40
TOSHIBA Weight : 0.21g UNIT
Collector Current ic
200 mA
Base Current
Collector Power...
