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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2N3904
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
.
FEATURES . Low Leakage Current
: ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA . Low Collector Output Capacitance
: C b=4pF(Max.) @ V C B=5V . Complementary to 2N3906
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VCBO VCEO VEBO
RATING 60 40
6
TOSHIBA Weight : 0.21g UNIT
V V V
Collector Current
ic
200
mA
Base Current
IB
Collector Power Dissipation
(Ta=25°C) Derate Linearly 25°C
PC
50
mA
350
mW
2.8 mW/°C
Collector Power Dissipation
1.
2N3904 Datasheet
