Part 2N3906
Description Silicon PNP Transistor
Category Transistor
Manufacturer Toshiba
Size 65.50 KB
Toshiba

2N3906 Overview

Key Features

  • Low Leakage Current : ICEV=-50nA(Max.), lBEV=50nA(Max
  • @ VcE=-30V, VBE=3V
  • Excellent DC Current Gain Linearity
  • Low Saturation Voltage : v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5mA
  • Low Collector Output Capacitance : C b=4.5pF(Max.) @ Vcb=-5V
  • Complementary to 2N3904 - EMITTER - BASE - COLLECTOR
2N3906 reference image

Representative 2N3906 image (package may vary by manufacturer)