2N3906 Datasheet | Toshiba

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm 5.1 MAX. Features : . Low Leakage Current : ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ Vcb=-5V . plementary to 2N3904 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current ic -200 Base Current -50 Collector Power...