• Part: 2N3906
  • Manufacturer: Toshiba
  • Size: 65.50 KB
Download 2N3906 Datasheet PDF
2N3906 page 2
Page 2

2N3906 Description

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3906 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.

2N3906 Key Features

  • 55-150
  • In accordance with JEDEC registration data
  • Collector Cut-off Current
  • Base Cut-off Current
  • B: Collector-Base Breakdown Voltage
  • Collector-Emitter Breakdown Voltage
  • Emitter-Base Breakdown Voltage
  • Base-Emitter Saturation Voltage
  • x Collector Output Capacitance
  • X- Input Capacitance