2N3906 - Silicon PNP Transistor

Toshiba

Key Features

. Low Leakage Current : ICEV=-50nA(Max. ), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max. ) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ Vcb=-5V . Complementary to 2N3904 1.

2N3906 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N3906
Manufacturer	Toshiba
File Size	65.50 KB
Description	Silicon PNP Transistor
Datasheet	2N3906 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3906 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm 5.1 MAX. FEATURES: . Low Leakage Current : ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ Vcb=-5V . Complementary to 2N3904 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current ic -200 Base Current IB -50 Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C PC 350 2.