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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2N3906
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Unit in mm
5.1 MAX.
FEATURES: . Low Leakage Current
: ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance
: C b=4.5pF(Max.) @ Vcb=-5V . Complementary to 2N3904
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-5
Collector Current
ic
-200
Base Current
IB
-50
Collector Power Dissipation
(Ta=25°C) Derate Linearly 25°C
PC
350
2.
2N3906 Datasheet
