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2N3906S - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • Low Leakage Current : ICEX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max. ) @VCB=-5V. Complementary to 2N3904S.

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Datasheet Details

Part number 2N3906S
Manufacturer KEC
File Size 685.17 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet 2N3906S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904S. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Base Current IB -50 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.