KEC 2N3906
EPITAXIAL PLANAR PNP TRANSISTOR
| Part No. | 2N3906 |
|---|---|
| Datasheet | 2N3906 Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Buy | Stock & Price |
FEATURES
Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. Complementary to 2N3904. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Storage Temperature Range Tj Tstg RATING -40 -40 -5 -200 -50 625 1.5 150 -55 150 UNIT V V V mA mA mW W L M C 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 2002. 9. 12 Revision No : 2 1/4 2N3906 ELECT
