2N3906C
2N3906C is EPITAXIAL PLANAR PNP TRANSISTOR manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
Features
ᴌLow Leakage Current
: ICEX=-50n A(Max.), IBL=-50n A(Max.) @VCE=-30V, VEB=-3V. ᴌExcellent DC Current Gain Linearity. ᴌLow Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50m A, IB=-5m A. ᴌLow Collector Output Capacitance : Cob=4.5p F(Max.) @VCB=5V. ᴌplementary to 2N3904C.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING -40 -40 -5 -200 -50 625 1.5 150
-55ᴕ150
UNIT V V V m A m A m W W ᴱ ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
1994....
