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2N3906
General Purpose Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS Rating
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol VCEO VCBO VEBO
IC PD
Value 40 40 5.0 200 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Power Dissipation @ TA = 60°C
PD
250
mW
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.
2N3906 Datasheet
