KEC 2N3906SC
EPITAXIAL PLANAR PNP TRANSISTOR
| Part No. | 2N3906SC |
|---|---|
| Datasheet | 2N3906SC Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Buy | Stock & Price |
FEATURES
Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Complementary to 2N3904SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Base Current IB -50 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2015. 5. 12 Revision No : 0 1/3 2N3906SCELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICEX VCE=-30V, VEB=-3V Collector Cut-off Current ICBO VCB=-30V, IE=0 Emitter Cut-off Current IEBO VEB=-3V, IC=0 Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 Emitter-Base Breakdown Voltage * V(BR)EBO I...
