2N3906SC - EPITAXIAL PLANAR PNP TRANSISTOR

KEC

Key Features

Low Leakage Current : ICEX=-50nA(Max. ), IBL=-50nA(Max. ) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) @IC=-50mA, IB=-5mA. Complementary to 2N3904SC.

2N3906SC epitaxial planar pnp transistor by KEC - Datasheet Preview

Datasheet Details

Part number	2N3906SC
Manufacturer	KEC
File Size	700.00 KB
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet	2N3906SC Datasheet

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Other Datasheets by KEC

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3906SC EPITAXIAL PLANAR PNP TRANSISTOR FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Complementary to 2N3904SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Base Current IB -50 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2015. 5.