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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌLow Leakage Current
: ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ᴌExcellent DC Current Gain Linearity. ᴌLow Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ᴌLow Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=-5V. ᴌComplementary to 2N3904U.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IB PC Tj
Storage Temperature Range
Tstg
RATING -40 -40 -5 -200 -50 100 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
A
2N3906U
EPITAXIAL PLANAR PNP TRANSISTOR
J
G
C
L
E
M
B
M
2 1
N
K
DIM MILLIMETERS
D
A
B
2.
2N3906U Datasheet
