2N3906S Description
·Low voltage( max .40V ) ·Low current ( max .200mA ) APPLICATIONS ·Designed for high-speed switching ·Amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=-10mA, IE=0 V(BR)CEO Collector-emitter breakdown voltage IC= -1mA , IB=0 V(BR)EBO Emitter-base breakdown voltage...