The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Power Transistor
DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA )
APPLICATIONS ·Designed for high-speed switching ·Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
Ptot
Total Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
2N3906S
VALUE -40 -40 -5 -200 300
-55~150 -55~150
UNIT V V V mA
mW ℃ ℃
MAX 250
UNIT K/W
isc website：www.iscsemi.
2N3906S Datasheet
