| Part Number | 2N3906S Datasheet |
|---|---|
| Manufacturer | KEC |
| Overview | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearit. Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904S. MAXIMUM RATING (Ta=25 ) CHARACTE. |
2N3906S Datasheet and Specifications PDF
The 2N3906S is a EPITAXIAL PLANAR PNP TRANSISTOR.
Key Specifications
| Part Number | 2N3906S Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low voltage( max .40V ) ·Low current ( max .200mA ) APPLICATIONS ·Designed for high-speed switching ·Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base. VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA VBE(sat)1 base-emitter saturation voltage IC= -10mA; IB=-1mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO collector cut-off curren. |