Datasheet Details
| Part number | 2N3906 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.84 KB |
| Description | PNP Transistor |
| Datasheet | 2N3906-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N3906 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.84 KB |
| Description | PNP Transistor |
| Datasheet | 2N3906-INCHANGE.pdf |
|
|
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·Low voltage( max .40V ) ·Low current ( max .200mA ) ·NPN complement to Type 2N3904.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching ·Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IBM Peak base current Ptot Total Power Dissipation TJ Junction Temperature Tstg Storage Temperature VALUE UNIT -40 V -40 V -5 V -200 mA -300 mA -100 mA -500 mW -65~150 ℃ -65~150 ℃ 2N3906 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient MAX 250 UNIT K/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N3906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=-10mA, IE=0 V(BR)CEO Collector-emitter breakdown voltage IC= -1mA , IB=0 V(BR)EBO Emitter-base breakdown voltage IE= -10mA, IC=0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= -10mA;
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