Datasheet4U Logo Datasheet4U.com

2N3902 - NPN Transistor

General Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested

and reliable operation.

Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N3902 Bipolar Transistor Multicomp
2N3902 NPN HIGH POWER SILICON TRANSISTOR Microsemi
2N3902 Bipolar NPN Device Seme LAB
2N3902 HIGH VOLTAGE NPN SILICON TRANSISTORS Motorola
2N3902 NPN High Power Silicon Transistors VPT

Other Datasheets by Inchange Semiconductor

Part Number Description
2N3906 PNP Transistor
2N3906S PNP Transistor
2N3055 NPN Transistor
2N3055B NPN Transistor
2N3171H PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.5 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Operating Temperature Range -65~+150 ℃ Tstg Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.