2N3904 - EPITAXIAL PLANAR NPN TRANSISTOR

KEC

Key Features

Low Leakage Current : ICEX=50nA(Max. ), IBL=50nA(Max. ) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max. ) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max. ) @VCB=5V. Complementary to 2N3906.

2N3904 epitaxial planar npn transistor by KEC - Datasheet Preview

Datasheet Details

Part number	2N3904
Manufacturer	KEC
File Size	765.64 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	2N3904 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N3904	NPN switching transistor	NXP
2N3904	NPN Amplifier	Fairchild Semiconductor
2N3904	Silicon NPN Transistor	Toshiba
2N3904	Silicon NPN Transistor	NTE
2N3904	NPN Transistor	Multicomp

Other Datasheets by KEC

Part Number	Description
2N3904C	NPN Transistor
2N3904S	EPITAXIAL PLANAR NPN TRANSISTOR
2N3904SC	EPITAXIAL PLANAR NPN TRANSISTOR
2N3904U	NPN Transistor
2N3906	EPITAXIAL PLANAR PNP TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25 Tc=25 *PC Junction Temperature Storage Temperature Range *Cu Lead-Frame : 625mW(@Ta=25 ) 1.5W(@Tc=25 ) Fe Lead-Frame : 400mW(@Ta=25 ) 1.0W(@Tc=25 ) Tj Tstg RATING 60 40 6 200 50 625 400 1.5 1.