Datasheet4U.com

2N3903 Datasheet Silicon NPN Transistor

Manufacturer: Toshiba

Overview: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3903 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.

2N3903 datasheet preview

Datasheet Details

Part number	2N3903
Manufacturer	Toshiba
File Size	70.25 KB
Description	Silicon NPN Transistor
Datasheet	2N3903-Toshiba.pdf

Key Features

. Low Leakage Current : ICEV=50nA(Max. ), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0.3V(Max. ) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance : C ob=4pF(Max. ) @ V C B=5V . Complementary to 2N3905 ' Unit in mm 1.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	2N3903	NPN Silicon Transistor	Semtech Corporation
	2N3903	NPN Amplifier	Fairchild Semiconductor
	2N3903	NPN Transistor	Motorola
	2N3903	NPN SILICON TRANSISTOR	CENTRAL SEMICONDUCTOR
	2N3903	NPN Transistor	TAITRON

More Datasheets from Toshiba

Part Number	Description
2N3904	Silicon NPN Transistor
2N3905	Silicon PNP Transistor
2N3906	Silicon PNP Transistor
2N3055	Silicon NPN Transistor
2N3713	GENERAL PURPOSE POWER TRANSISTOR
2N3714	GENERAL PURPOSE POWER TRANSISTOR
2N3715	GENERAL PURPOSE POWER TRANSISTOR
2N3716	GENERAL PURPOSE POWER TRANSISTOR
2N3789	SILICON PNP Transistor
2N3790	Silicon PNP Transistor

2N3903 Distributor