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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2N3903
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
FEATURES . Low Leakage Current
: ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: VcE(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance
: C ob=4pF(Max.) @ V C B=5V . Complementary to 2N3905 '
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
flAXIMUn RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current
ic
200
Base Current
IB
50
Collector Power Dissipation
350
(Ta=25°C) Derate Linearly 25°C
PC
2.
2N3903 Datasheet
