Datasheet Summary
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Features
. Low Leakage Current
: ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: VcE(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance
: C ob=4pF(Max.) @ V C B=5V . plementary to 2N3905 '
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR flAXIMUn RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current ic
Base Current
Collector Power Dissipation
(Ta=25°C)...
