2N3905 Description
) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3905 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
2N3905 Key Features
- X Collector-Emitter Voltage
- Emitter-Base Voltage
- Collector Current
- 5 -200
- Collector Power Dissipation
- Collector Power Dissipation
- Thermal Resistance (Junction to Ambient)
- X Thermal Resistance (Junction to Case)
- X Junction Temperature -;-- Storage Temperature Range
- 55-150