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2N3905 - Silicon PNP Transistor

Datasheet Summary

Features

  • . Low Leakage Current : ICEV= -50nA(Max. ), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max. ) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ VCB =-5V . Complementary to 2N3903 J EDEC 1.

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Datasheet Details

Part number 2N3905
Manufacturer Toshiba
File Size 63.77 KB
Description Silicon PNP Transistor
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Full PDF Text Transcription

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: ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3905 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ VCB =-5V . Complementary to 2N3903 J EDEC 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING &• Collector-Base Voltage VCBO -40 •X Collector-Emitter Voltage VCEO -40 * Emitter-Base Voltage * Collector Current vebo ic -5 -200 Base Current IB -50 * Collector Power Dissipation 350 (Ta=25°C) Derate Linearly 25°C PC 2.8 * Collector Power Dissipation 1.
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