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CEB14P20 Datasheet Preview

CEB14P20 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CEB14P20 pdf
CEP14P20/CEB14P20
CEF14P20
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP14P20
CEB14P20
CEF14P20
VDSS
-200V
-200V
-200V
RDS(ON)
0.36Ω
0.36Ω
0.36Ω
ID
-13.5A
-13.5A
-13.5A d
@VGS
-10V
-10V
-10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
VDS -200
VGS ±30
ID -13.5
-8.5
IDM e
-54
139
PD
1.11
TO-220F
-13.5 d
-8.5 d
-54 d
42
0.33
Single Pulsed Avalanche Energy h
Single Pulsed Avalanche Current h
EAS 273
IAS 13.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.9
62.5
3
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Mar
http://www.cetsemi.com



CET
CET

CEB14P20 Datasheet Preview

CEB14P20 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEB14P20 pdf
CEP14P20/CEB14P20
CEF14P20
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -200V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
-200
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -6.8A
-2
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -100V, ID = -13.5A,
VGS = -10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = -160V, ID = -13.5A,
VGS = -10V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -13.5A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 7.4A .
g.Full package VSD test condition IS = 7.4A .
h.L = 3mH, IAS =13.5A, VDD = 25V, RG = 25, Starting TJ = 25 C.
Typ
0.30
1620
240
50
28
74
260
120
52
9
25
Max Units
-1
100
-100
V
µA
nA
nA
-4 V
0.36
pF
pF
pF
56 ns
148 ns
520 ns
240 ns
68 nC
nC
nC
-13.5
-1.5
A
V
4
2


Part Number CEB14P20
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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CEB14P20 pdf
CEB14P20 Datasheet PDF
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