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CEB15A03 Datasheet Preview

CEB15A03 Datasheet

N-Channel MOSFET

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CEP15A03/CEB15A03
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 190A, RDS(ON) = 4.5m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 190
IDM 760
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
200
1.3
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
405
52
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2010.June
http://www.cet-mos.com




CET

CEB15A03 Datasheet Preview

CEB15A03 Datasheet

N-Channel MOSFET

No Preview Available !

CEP15A03/CEB15A03
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 70A
VDS = 25V, ID = 70A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 28V, ID = 10A,
VGS = 10V, RGEN = 4.5
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 32V, ID = 70A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 70A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.3mH, IAS = 52A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
Min
30
2
Typ
3.8
30
3350
1570
245
30
21
84
39
114.7
14.5
47.3
Max
25
100
-100
4
4.5
60
42
168
78
179
190
1.3
Units
V
µA
nA
nA
V
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2


Part Number CEB15A03
Description N-Channel MOSFET
Maker CET
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