CEB16N10L
CEB16N10L is N-Channel MOSFET manufactured by CET.
FEATURES
100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
±20
15.2 60 60 0.48
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units V V A A W
W/ C C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.5 50
Units C/W C/W
Details are subject to change without notice .
Rev 1. 2010.Jan. http://.cet-mos.
CEP16N10L/CEB16N10L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics
Symbol
Test Condition
Min Typ Max Units
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics c
BVDSS IDSS IGSSF...
