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CEEF02N65G Datasheet Preview

CEEF02N65G Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEEF02N65G pdf
CEEF02N65G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 2.0A, RDS(ON) = 5.0@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-126F package.
D
G
D
S
CEE SERIES
TO-126F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
650
±30
2d
8
56
0.44
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.3
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2012.Mar
http://www.cetsemi.com



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CET

CEEF02N65G Datasheet Preview

CEEF02N65G Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEEF02N65G pdf
CEEF02N65G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1A
2
4
4.3 5.0
V
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
295
75
pF
pF
Crss 15 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 1A,
VGS = 10V, RGEN = 18
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
19
11
29
10
6.7
1.5
3
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 1A
2A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed.
e.Pulse width limited by safe operating area.
2


Part Number CEEF02N65G
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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