900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CET

CEF01N6 Datasheet Preview

CEF01N6 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEP01N6/CEB01N6
CEI01N6/CEF01N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP01N6
CEB01N6
CEI01N6
CEF01N6
VDSS
650V
650V
650V
650V
RDS(ON)
15
15
15
15
ID @VGS
1A 10V
1A 10V
1A 10V
1A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
650
±30
1
4
1e
4e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
36 28
PD 0.29 0.22
Single Pulsed Avalanche Energy d
EAS 60
Repetitive Avalanche Current
IAS 0.8
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
62.5
4.5
65
Units
C/W
C/W
Rev 1. 2005.December
1
http://www.cetsemi.com




CET

CEF01N6 Datasheet Preview

CEF01N6 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEP01N6/CEB01N6
CEI01N6/CEF01N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
V
1 µA
10 µA
-10 µA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forwand Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.4A
2
4
12 15
V
gFS b
Ciss
Coss
Crss
VDS = 20V, ID = 0.4A
VDS = 25V, VGS = 0V
f = 1.0MHz
0.5 S
136 pF
46 pF
19 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 0.4A,
VGS = 10V, RGEN = 4.7
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 0.8A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
19 38 ns
13 26 ns
24 48 ns
35 70 ns
6 8 nC
1.0 nC
4.4 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.8A
0.8 A
1.6 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L = 190mH, IAS = 0.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
6
2


Part Number CEF01N6
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
PDF Download

CEF01N6 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 CEF01N6 N-Channel Enhancement Mode Field Effect Transistor
CET
2 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor
CET
3 CEF01N6G N-Channel Enhancement Mode Field Effect Transistor
CET





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy