CEM3178 transistor equivalent, dual n-channel enhancement mode field effect transistor.
30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead .
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