• Part: CEM8958A
  • Description: Dual Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: CET
  • Size: 564.82 KB
Download CEM8958A Datasheet PDF
CET
CEM8958A
FEATURES 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; Ro HS pliant. Surface mount Package. SOP-8 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous@TA= 25 C @TA= 70 C Drain Current-Pulsed a 6.8 5.4 IDM 27 P-Channel -30 ±20 -4.8 -3.7 -19 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A A Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Thermal Resistance, Junction-to-Case Symbol RθJA RθJc Limit 62.5 40 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change...