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CEM8958 - Dual Enhancement Mode Field Effect Transistor(N and P Channel)

This page provides the datasheet information for the CEM8958, a member of the CEM8958_Chino Dual Enhancement Mode Field Effect Transistor(N and P Channel) family.

Datasheet Summary

Features

  • 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -5.2A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 87 65 5 SO-8 1 1234 S1 G1 S2 G2.

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Datasheet preview – CEM8958

Datasheet Details

Part number CEM8958
Manufacturer Chino-Excel Technology
File Size 192.16 KB
Description Dual Enhancement Mode Field Effect Transistor(N and P Channel)
Datasheet download datasheet CEM8958 Datasheet
Additional preview pages of the CEM8958 datasheet.

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Full PDF Text Transcription

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CEM8958 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -5.2A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 87 65 5 SO-8 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 7 IDM 20 P-Channel -30 ±20 -5.2 -20 Maximum Power Dissipation PD 2.
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