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CEM8958A - Dual Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. SOP-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2.

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Datasheet Details

Part number CEM8958A
Manufacturer CET
File Size 564.82 KB
Description Dual Enhancement Mode Field Effect Transistor
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CEM8958A Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. SOP-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous@TA= 25 C @TA= 70 C Drain Current-Pulsed a ID 6.8 5.4 IDM 27 P-Channel -30 ±20 -4.8 -3.7 -19 Maximum Power Dissipation PD 2.
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