Datasheet4U Logo Datasheet4U.com

CEM8958G - Dual-Channel MOSFET

Datasheet Summary

Features

  • 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5.

📥 Download Datasheet

Datasheet preview – CEM8958G

Datasheet Details

Part number CEM8958G
Manufacturer CET
File Size 578.36 KB
Description Dual-Channel MOSFET
Datasheet download datasheet CEM8958G Datasheet
Additional preview pages of the CEM8958G datasheet.

📁 Similar Datasheet

  • CEM8958 - Dual Enhancement Mode Field Effect Transistor(N and P Channel) (Chino-Excel Technology)
  • CEM8912 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEM8933 - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEM8938 - Dual MOSFET (Chino-Excel Technology)
  • CEM8947 - Dual P-Channel Enhancement Mode MOSFET (Chino-Excel Technology)
  • CEM820 - Type 2 Module (Axiomtek)
  • CEM8206 - Dual N-Channel MOSFET (Chino-Excel Technology)
  • CEM8207 - Dual N-Channel MOSFET (Chino-Excel Technology)
  • CEM8208 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEM8410 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
Other Datasheets by CET
  • CEM8958A - Dual Enhancement Mode Field Effect Transistor
  • CEM8968 - Dual Enhancement Mode Field Effect Transistor
  • CEM8311 - Dual P-Channel MOSFET
  • CEM8401 - Dual-Channel MOSFET
  • CEM0215 - N-Channel MOSFET
  • CEM0310 - Single N-Channel Enhancement Mode Field Effect Transistor
  • CEM0410 - Single N-Channel Enhancement Mode Field Effect Transistor
  • CEM0415 - N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
CEM8958G Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2 5 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 7 IDM 28 P-Channel -30 ±20 -4.8 -19 Maximum Power Dissipation PD 2.
Published: |