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CEP83A3 Datasheet Preview

CEP83A3 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEP83A3 pdf
CEP83A3/CEB83A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 100A, RDS(ON) = 5.3m@VGS = 10V.
RDS(ON) = 8.0m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
100
400
100
0.67
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 875
IAS 35
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
Units
C/W
C/W
Rev 1. 2005.August
4 - 178
http://www.cetsemi.com



CET
CET

CEP83A3 Datasheet Preview

CEP83A3 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEP83A3 pdf
CEP83A3/CEB83A3
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 40A
VDS = 10V, ID = 15A
1
3V
4.2 5.3 m
6.0 8.0 m
27 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
9500
800
300
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 16A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
25.7 50
10 20
128 200
34 70
50 65
20.8
19
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 20A
90 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
4
4 - 179


Part Number CEP83A3
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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